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LS4448
SILICON EPITAXIAL PLANAR DIODE
fast switching diode in QuadroMELF case especially suited for automatic surface mounting. Identical electrically to standard JEDEC 1N4448.
LS-34
QuadroMELF Dimensions in mm
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Peak Reverse Voltage Reverse Voltage Rectified Current (Average) Half Wave Rectification with Resist. Load (f 50 Hz) Surge Forward Current at t < 1 s and Tj = 25 OC Power Dissipation Junction Temperature Storage Temperature Range
1)
Symbol VRM VR IO IFSM Ptot Tj TS
Value 100 75 150
1)
Unit V V mA mA mW
O
500 500
1)
175 - 65 to + 175
C C
O
Valid provided that electrodes are kept at ambient temperature.
Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 5 mA at IF = 100 mA Leakage Current at VR = 20 V at VR = 75 V Reverse Breakdown Voltage tested with 100 A Pulses Capacitance at VF = VR = 0 Reverse Recovery Time from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Thermal Resistance Junction to Ambient Air Rectification Efficiency at f = 100 MHz, VRF = 2 V
1)
Symbol VF
Min. 0.62 100 0.45
Max. 0.72 1 25 5 4 4 0.35 1) -
Unit V
IR V(BR)R Ctot trr RthA v
nA A V pF ns K/mW -
Valid provided that electrodes are kept at ambient temperature.
SEMTECH ELECTRONICS LTD.
(R)
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 12/01/2007
LS4448
Forward characteristics mA 10
3
Dynamic forward resistance versus forward current LL 4448 LL 4448 10 4
5 2 Tj=25 oC f=1KHz
10 2 iF 10
o Tj=100 C o Tj=25 C
10 3 rf
5 2
10 2 1
5 2
10 -1
10
5 2
10 -2 0 1 VF 2V
1 10 -2 10 -1 1 10 IF 10 2 mA
Admissible power dissipation versus ambient temperature
Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature
Relative capacitance versus reverse voltage
mW 1000 900 800 700 600 500 400 300 200 100 0 0 100
LL 4448
LL 4448
Tj=25 oC f=1MHz
1.1 Ctot(VR) Ctot(0V) 1.0
Ptot
0.9
0.8
0.7
o
0 0 2 4 6 VR 8 10 V
200 C Tamb
SEMTECH ELECTRONICS LTD.
(R)
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 12/01/2007
LS4448
Leakage current versus junction temperature nA 10 4
5 2
LL 4448
10 3 IR
5 2
2nF
60
10 2
5 2
VRF =2V
5K
~ ~ ~
10
5
Rectification Efficiency Measurement Circuit
VR=20V
2
1 0 100 Tj 200 C
o
Admissible repetitive peak forward current versus pulse duratin A 100
5 4 3 2 I v=tp/T T=1/fp Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature
LL 4448
IFRM v=0
tp t
10 IFRM
5 4 3 2
0.1
T
0.2 0.5
1
5 4 3 2
0.1 10 -5
2 5
10 -4
2
5
10 -3
2
5
10 -2
2
5
10 -1
2
5
1
2
5
10 s
tp
SEMTECH ELECTRONICS LTD.
(R)
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 12/01/2007
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